文献
J-GLOBAL ID:202002285304199758
整理番号:20A0479890
ZnO/p-Siヘテロ接合の形態的および電気的性質の研究:室温における低濃度エタノール蒸気の検出効率への応用【JST・京大機械翻訳】
Study of morphological and electrical properties of the ZnO/p-Si hetero-junction: Application to sensing efficiency of low concentration of ethanol vapor at room temperature
著者 (6件):
Tata S.
(Department of Materials & Compounds, Faculty of Physics, USTHB, BP 32, 16111, Algiers, Algeria)
,
Chabane L.
(Department of Materials & Compounds, Faculty of Physics, USTHB, BP 32, 16111, Algiers, Algeria)
,
Zebbar N.
(Department of Materials & Compounds, Faculty of Physics, USTHB, BP 32, 16111, Algiers, Algeria)
,
Trari M.
(Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry, USTHB, BP 32, 16111, Algiers, Algeria)
,
Kechouane M.
(Department of Materials & Compounds, Faculty of Physics, USTHB, BP 32, 16111, Algiers, Algeria)
,
Rahal A.
(Department of Materials & Compounds, Faculty of Physics, USTHB, BP 32, 16111, Algiers, Algeria)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
109
ページ:
Null
発行年:
2020年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)