文献
J-GLOBAL ID:202002285378667961
整理番号:20A2553343
SiC MOSFETハーフブリッジコンバータに及ぼすボディダイオード逆回復効果【JST・京大機械翻訳】
Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters
著者 (6件):
Pulvirenti Mario
(STMicroelectronics,Power Transistor Macro Division,Automotive & Discrete Group,Catania,Italy)
,
Sciacca Angelo G.
(STMicroelectronics,Power Transistor Macro Division,Automotive & Discrete Group,Catania,Italy)
,
Salvo Luciano
(STMicroelectronics,Power Transistor Macro Division,Automotive & Discrete Group,Catania,Italy)
,
Nania Massimo
(STMicroelectronics,Power Transistor Macro Division,Automotive & Discrete Group,Catania,Italy)
,
Scelba Giacomo
(University of Catania,Department of Electric, Electronic and Computer Engineering,Catania,Italy)
,
Scarcella Giuseppe
(University of Catania,Department of Electric, Electronic and Computer Engineering,Catania,Italy)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
ECCE
ページ:
2871-2877
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)