文献
J-GLOBAL ID:202002285864211862
整理番号:20A0885228
歪んだSi/緩和SiGe/Si(110)ヘテロ構造における正孔移動度のゲートHall測定による研究【JST・京大機械翻訳】
Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero structures studied by gated Hall measurements
著者 (10件):
Namiuchi Daichi
(Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, 400-8511, Japan)
,
Onogawa Atsushi
(Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, 400-8511, Japan)
,
Fujisawa Taisuke
(Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, 400-8511, Japan)
,
Sano Yuichi
(Center for Instrumental Analysis, University of Yamanashi, Japan)
,
Izumi Daisuke
(Center for Instrumental Analysis, University of Yamanashi, Japan)
,
Yamanaka Junji
(Center for Instrumental Analysis, University of Yamanashi, Japan)
,
Hara Kosuke O.
(Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, 400-8511, Japan)
,
Sawano Kentarou
(Advanced Research Laboratories, Tokyo City University, Japan)
,
Nakagawa Kiyokazu
(Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, 400-8511, Japan)
,
Arimoto Keisuke
(Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, 400-8511, Japan)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
113
ページ:
Null
発行年:
2020年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)