文献
J-GLOBAL ID:202002286857463835
整理番号:20A2123007
ドライエッチングによるMEMSデバイス用の固定懸垂窒化けい素構造の新しい作製【JST・京大機械翻訳】
Novel fabrication of fixed suspended silicon nitride structure for MEMS devices with dry etching
著者 (5件):
Subhani Khawaja Nizammuddin
(Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, India)
,
Subhani Khawaja Nizammuddin
(School of Electronics and Communication Engineering, Reva University, Bangalore, India)
,
Khandare Shubham
(Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, India)
,
Biradar R C
(School of Electronics and Communication Engineering, Reva University, Bangalore, India)
,
Bhat K N
(Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, India)
資料名:
IOP Conference Series: Materials Science and Engineering
(IOP Conference Series: Materials Science and Engineering)
巻:
872
号:
1
ページ:
012157 (7pp)
発行年:
2020年
JST資料番号:
W5559A
ISSN:
1757-8981
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)