文献
J-GLOBAL ID:202002287167909196
整理番号:20A0524458
還元焼結-再酸化法により調製した[数式:原文を参照]ドープ[数式:原文を参照]ベースのチップ型セラミックにおけるPTCR特性の研究【JST・京大機械翻訳】
Investigation of PTCR characteristics in [Formula : see text]-doped [Formula : see text]-based chip-type ceramics prepared by reduction sintering-reoxidation method
著者 (5件):
Cheng Xuxin
(School of Electronic and Electrical Engineering, Zhaoqing University, Zhaoqing 526061, P. R. China)
,
Chen Xiaoming
(School of Electronic and Electrical Engineering, Zhaoqing University, Zhaoqing 526061, P. R. China)
,
Cui Haining
(School of Electronic and Electrical Engineering, Zhaoqing University, Zhaoqing 526061, P. R. China)
,
Wang Yuxin
(School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, P. R. China)
,
Xiong Chao
(School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou 213001, P. R. China)
資料名:
International Journal of Modern Physics B. Condensed Matter Physics, Statiscal Physics, Applied Physics
(International Journal of Modern Physics B. Condensed Matter Physics, Statiscal Physics, Applied Physics)
巻:
34
号:
1-3
ページ:
2040047
発行年:
2020年
JST資料番号:
T0396A
ISSN:
0217-9792
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
シンガポール (SGP)
言語:
英語 (EN)