文献
J-GLOBAL ID:202002288636476032
整理番号:20A2018289
高品質の低コストGaN/サファイア基板上にヘテロエピタキシャル成長した効率的な半極性410nmバイオレットレーザダイオードの実証【JST・京大機械翻訳】
Demonstration of Efficient Semipolar 410 nm Violet Laser Diodes Heteroepitaxially Grown on High-Quality Low-Cost GaN/Sapphire Substrates
著者 (7件):
Li Hongjian
(Materials Department, University of California, California, United States)
,
Li Panpan
(Materials Department, University of California, California, United States)
,
Zhang Haojun
(Department of Electrical and Computer Engineering, University of California, California, United States)
,
Nakamura Shuji
(Materials Department, University of California, California, United States)
,
Nakamura Shuji
(Department of Electrical and Computer Engineering, University of California, California, United States)
,
DenBaars Steven P.
(Materials Department, University of California, California, United States)
,
DenBaars Steven P.
(Department of Electrical and Computer Engineering, University of California, California, United States)
資料名:
ACS Applied Electronic Materials
(ACS Applied Electronic Materials)
巻:
2
号:
7
ページ:
1874-1879
発行年:
2020年
JST資料番号:
W5669A
ISSN:
2637-6113
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)