文献
J-GLOBAL ID:202002289006249746
整理番号:20A2233963
スピン移動トルク磁気ランダムアクセスメモリのドライエッチング戦略:レビュー【JST・京大機械翻訳】
Dry etching strategy of spin-transfer-torque magnetic random access memory: A review
著者 (3件):
Islam Rabiul
(Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada)
,
Cui Bo
(Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada)
,
Miao Guo-Xing
(Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
38
号:
5
ページ:
050801-050801-19
発行年:
2020年
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
文献レビュー
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)