文献
J-GLOBAL ID:202002289352322930
整理番号:20A1236170
分子ビームエピタクシーにより成長させた高スカンジウム分率ヘテロエピタキシャルスケールにおける相純度の制御
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy
著者 (8件):
Hardy Matthew T.
(Electronics Science & Technology Division, U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375, United States of America)
,
Jin Eric N.
(National Research Council Postdoctoral Fellow Residing at the U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375, United States of America)
,
Nepal Neeraj
(Electronics Science & Technology Division, U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375, United States of America)
,
Katzer D. Scott
(Electronics Science & Technology Division, U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375, United States of America)
,
Downey Brian P.
(Electronics Science & Technology Division, U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375, United States of America)
,
Gokhale Vikrant J.
(National Research Council Postdoctoral Fellow Residing at the U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375, United States of America)
,
Storm David F.
(Electronics Science & Technology Division, U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375, United States of America)
,
Meyer David J.
(Electronics Science & Technology Division, U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375, United States of America)
資料名:
Applied Physics Express
(Applied Physics Express)
巻:
13
号:
6
ページ:
065509 (5pp)
発行年:
2020年06月
JST資料番号:
F0599C
ISSN:
1882-0778
CODEN:
APEPC4
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
イギリス (GBR)
言語:
英語 (EN)