文献
J-GLOBAL ID:202002290124166118
整理番号:20A2798933
STEM-EELSスペクトルイメージング法を用いたシリコンベース多層のナノ特性評価【JST・京大機械翻訳】
Nano-characterization of silicon-based multilayers using the technique of STEM-EELS spectrum-imaging
著者 (6件):
Anjum Dalaver H.
(Department of Physics, Khalifa University, P.O. Box 127788, Abu Dhabi, United Arab Emirates)
,
Qattan I.A.
(Applied Quantum Materials Lab (AQML), Department of Physics, Khalifa University, P.O. Box 127788, Abu Dhabi, United Arab Emirates)
,
Patole Shashikant
(Applied Quantum Materials Lab (AQML), Department of Physics, Khalifa University, P.O. Box 127788, Abu Dhabi, United Arab Emirates)
,
Diallo Elhadj M.
(Ali I. Al-Naimi Petroleum Engineering Research Center (ANPERC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia)
,
Wei Nini
(Imaging and Characterization Lab, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia)
,
Heidbreder Henry
(Tystar Corporation, 7050 Lampson Ave, Garden Grove, CA, 92841, United States)
資料名:
Materials Today Communications
(Materials Today Communications)
巻:
25
ページ:
Null
発行年:
2020年
JST資料番号:
W3060A
ISSN:
2352-4928
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)