文献
J-GLOBAL ID:202002290936324633
整理番号:20A2207174
抵抗ランダムアクセスメモリ応用のためのグラフェンバンドエンジニアリング【JST・京大機械翻訳】
Graphene band engineering for resistive random-access memory application
著者 (6件):
Koohzadi Pooria
(Department of Electrical Engineering, Urmia University, 57157, Urmia, Iran)
,
Ahmadi Mohammad Taghi
(Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam)
,
Ahmadi Mohammad Taghi
(Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam)
,
Karamdel Javad
(Department of Electrical Engineering, South Tehran Branch, Islamic Azad University, Tehran, Iran)
,
Nguyen Truong Khang
(Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam)
,
Nguyen Truong Khang
(Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam)
資料名:
International Journal of Modern Physics B. Condensed Matter Physics, Statiscal Physics, Applied Physics
(International Journal of Modern Physics B. Condensed Matter Physics, Statiscal Physics, Applied Physics)
巻:
34
号:
18
ページ:
2050171
発行年:
2020年
JST資料番号:
T0396A
ISSN:
0217-9792
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
シンガポール (SGP)
言語:
英語 (EN)