文献
J-GLOBAL ID:202002291299336649
整理番号:20A2501598
ゲートオールアラウンドMOSFETのためのSi_0.7Ge_0.3/Si積層多層の熱安定性の研究【JST・京大機械翻訳】
Investigation on thermal stability of Si0.7Ge0.3/Si stacked multilayer for gate-all-around MOSFETS
著者 (17件):
Cheng Xiaohong
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Li Yongliang
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Wang Guilei
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Liu Haoyan
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Zan Ying
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Lin Hongxiao
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Kong Zhenzhen
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Zhong Zhaoyang
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Zhong Zhaoyang
(School of Applied Science, Beijing Information Science and Technology University, Beijing 100192, People’s Republic of China)
,
Li Yan
(School of Applied Science, Beijing Information Science and Technology University, Beijing 100192, People’s Republic of China)
,
Wang Hanxiang
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Xu Gaobo
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Ma Xueli
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Wang Xiaolei
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Yang Hong
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Luo Jun
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
,
Wang Wenwu
(Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, People’s Republic of China)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
35
号:
11
ページ:
115008 (5pp)
発行年:
2020年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)