文献
J-GLOBAL ID:202002291363557823
整理番号:20A0819011
強い閾値電圧分布を持つFeFETメモリアレイ上のHf_0.5Zr_0.5O_2膜へのSi単分子層挿入による均一分散Alナノクラスタの影響【JST・京大機械翻訳】
Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf0.5Zr0.5O2 Film on FeFET Memory Array with Tight Threshold Voltage Distribution
著者 (10件):
Maekawa K.
(Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan)
,
Yamashita T.
(Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan)
,
Yamaguchi T.
(Renesas lectronics Corp,Process Production Technology Div.,Hitachinaka, Ibaraki,Japan)
,
Ohara T.
(Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan)
,
Amo A.
(Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan)
,
Tsukuda E.
(Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan)
,
Sonoda K.
(Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan)
,
Yanagita H.
(Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan)
,
Inoue M.
(Renesas lectronics Corp,Process Production Technology Div.,Hitachinaka, Ibaraki,Japan)
,
Matsuura M.
(Renesas lectronics Corp,Process Production Technology Div.,Hitachinaka, Ibaraki,Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
IEDM
ページ:
15.4.1-15.4.4
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)