文献
J-GLOBAL ID:202002292108989982
整理番号:20A0489432
二つのアクセプタ間の有効電荷移動を有する非フラーレン三元有機太陽電池【JST・京大機械翻訳】
Nonfullerene Ternary Organic Solar Cell with Effective Charge Transfer between Two Acceptors
著者 (23件):
Yang Cheng
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China)
,
Yang Cheng
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Sun Yang
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China)
,
Sun Yang
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Li Qicong
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China)
,
Li Qicong
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Liu Kong
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China)
,
Liu Kong
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Xue Xiaodi
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China)
,
Xue Xiaodi
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Huang Yanbin
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China)
,
Huang Yanbin
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Ren Kuankuan
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China)
,
Ren Kuankuan
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Li Long
(Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, China)
,
Chen Yonghai
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China)
,
Chen Yonghai
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Wang Zhijie
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China)
,
Wang Zhijie
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Qu Shengchun
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China)
,
Qu Shengchun
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Wang Zhanguo
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China)
,
Wang Zhanguo
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
資料名:
Journal of Physical Chemistry Letters
(Journal of Physical Chemistry Letters)
巻:
11
号:
3
ページ:
927-934
発行年:
2020年
JST資料番号:
W3687A
ISSN:
1948-7185
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)