文献
J-GLOBAL ID:202102212117575227
整理番号:21A2981073
ナノ秒スイッチング特性とロバスト過電圧能力を持つP-N接合/AlGaN/GaN HEMTの1.2kV/25A【JST・京大機械翻訳】
1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability
著者 (10件):
Zhou Feng
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Xu Weizong
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Ren Fangfang
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Xia Yuanyang
(CorEnergy Semiconductor Company Ltd., Suzhou, China)
,
Wu Leke
(CorEnergy Semiconductor Company Ltd., Suzhou, China)
,
Zhu Tinggang
(CorEnergy Semiconductor Company Ltd., Suzhou, China)
,
Chen Dunjun
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Zhang Rong
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Zheng Youdou
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Lu Hai
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
資料名:
IEEE Transactions on Power Electronics
(IEEE Transactions on Power Electronics)
巻:
37
号:
1
ページ:
26-30
発行年:
2022年
JST資料番号:
D0211B
ISSN:
0885-8993
CODEN:
ITPEE8
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)