文献
J-GLOBAL ID:202102213286624087
整理番号:21A0147462
高線量Mg注入GaNにおけるパルスレーザアニーリングによる特性操作【JST・京大機械翻訳】
Property manipulation through pulsed laser annealing in high dose Mg-implanted GaN
著者 (10件):
Shi Ya-Ting
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China)
,
Ren Fang-Fang
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China)
,
Hao Jinggang
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China)
,
Wang Zhengpeng
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China)
,
Ye Jiandong
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China)
,
Xu Wei-Zong
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China)
,
Zhou Dong
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China)
,
Zhang Rong
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China)
,
Zheng Youdou
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China)
,
Lu Hai
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
128
号:
23
ページ:
235704-235704-8
発行年:
2020年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)