文献
J-GLOBAL ID:202102213329121921
整理番号:21A2169704
AlGaN/GaN高Electron移動度トランジスタのエンハンスメントモードに対するフッ素処理とリセスゲートによる帯電効果【JST・京大機械翻訳】
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
著者 (12件):
Kang Soo Cheol
(DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea)
,
Jung Hyun-Wook
(DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea)
,
Chang Sung-Jae
(DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea)
,
Kim Seung Mo
(Center for Emerging Electronic Devices and Systems (CEEDS), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea)
,
Lee Sang Kyung
(Center for Emerging Electronic Devices and Systems (CEEDS), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea)
,
Lee Byoung Hun
(Center for Emerging Electronic Devices and Systems (CEEDS), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea)
,
Kim Haecheon
(DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea)
,
Noh Youn-Sub
(DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea)
,
Lee Sang-Heung
(DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea)
,
Kim Seong-Il
(DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea)
,
Ahn Ho-Kyun
(DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea)
,
Lim Jong-Won
(DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea)
資料名:
Nanomaterials (Web)
(Nanomaterials (Web))
巻:
10
号:
11
ページ:
2116
発行年:
2020年
JST資料番号:
U7252A
ISSN:
2079-4991
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)