文献
J-GLOBAL ID:202102216261971219
整理番号:21A0089732
硫化サマリウムに基づく半導体構造における熱電圧効果の動力学法則【JST・京大機械翻訳】
Kinetic laws of the thermovoltaic effect in semiconductor structures based on samarium sulfide
著者 (7件):
Grevtsev M A
(Laboratory of physics of rare-earth semiconductors, Ioffe Institute, Saint Petersburg 194021, Russia)
,
Kazakov S A
(Laboratory of physics of rare-earth semiconductors, Ioffe Institute, Saint Petersburg 194021, Russia)
,
Havrov G D
(Laboratory of physics of rare-earth semiconductors, Ioffe Institute, Saint Petersburg 194021, Russia)
,
Kazanin M M
(Laboratory of physics of rare-earth semiconductors, Ioffe Institute, Saint Petersburg 194021, Russia)
,
Sharenkova N V
(Laboratory of physics of rare-earth semiconductors, Ioffe Institute, Saint Petersburg 194021, Russia)
,
Solov’ev S M
(Laboratory of physics of rare-earth semiconductors, Ioffe Institute, Saint Petersburg 194021, Russia)
,
Shulman S G
(Laboratory of physics of rare-earth semiconductors, Ioffe Institute, Saint Petersburg 194021, Russia)
資料名:
Journal of Physics: Conference Series
(Journal of Physics: Conference Series)
巻:
1697
号:
1
ページ:
012183 (5pp)
発行年:
2020年
JST資料番号:
W5565A
ISSN:
1742-6588
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)