文献
J-GLOBAL ID:202102218999852709
整理番号:21A0151780
FinFET技術におけるRC強化隅角試験構造設計とシリコン特性評価【JST・京大機械翻訳】
RC Tightened Corner Test structure Design and Silicon Characterization in FinFET Technology
著者 (8件):
Sun Lijie
(Hisilicon Corporation,Department of COT Design,Shanghai,China)
,
Zhang Mengying
(Hisilicon Corporation,Department of COT Design,Shanghai,China)
,
Wan Guangxing
(Hisilicon Corporation,Department of COT Design,Shanghai,China)
,
Wong Waisum
(Hisilicon Corporation,Department of COT Design,Shanghai,China)
,
Zhou Zhen
(School of Communication& Electronic Engineering, East China Normal University,Shanghai,China)
,
Li Xiaojin
(School of Communication& Electronic Engineering, East China Normal University,Shanghai,China)
,
Sun Yabin
(School of Communication& Electronic Engineering, East China Normal University,Shanghai,China)
,
Shi Yanling
(School of Communication& Electronic Engineering, East China Normal University,Shanghai,China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
ICSICT
ページ:
1-3
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)