文献
J-GLOBAL ID:202102220668336032
整理番号:21A0299046
埋め込みInGaAs量子ドットを持つGaAs太陽電池における電圧損失理由の研究【JST・京大機械翻訳】
The study of voltage loss reasons in GaAs solar cells with embedded InGaAs quantum dots
著者 (7件):
Salii R A
(Submicron Heterostructures for Microelectronics, Research & Engineering Center, 194021, St. Petersburg, Russia)
,
Evstropov V V
(Ioffe Institute, Saint Petersburg, 194021, Russia)
,
Mintairov S A
(Ioffe Institute, Saint Petersburg, 194021, Russia)
,
Mintairov M A
(Submicron Heterostructures for Microelectronics, Research & Engineering Center, 194021, St. Petersburg, Russia)
,
Nakhimovich M V
(Ioffe Institute, Saint Petersburg, 194021, Russia)
,
Shvarts M Z
(Ioffe Institute, Saint Petersburg, 194021, Russia)
,
Kalyuzhnyy N A
(Ioffe Institute, Saint Petersburg, 194021, Russia)
資料名:
Journal of Physics: Conference Series
(Journal of Physics: Conference Series)
巻:
1695
号:
1
ページ:
012078 (4pp)
発行年:
2020年
JST資料番号:
W5565A
ISSN:
1742-6588
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)