文献
J-GLOBAL ID:202102222093708628
整理番号:21A1447958
電力とRF応用のためのGaN FinFETとトリゲートデバイス:レビューと展望【JST・京大機械翻訳】
GaN FinFETs and trigate devices for power and RF applications: review and perspective
著者 (7件):
Zhang Yuhao
(Center for Power Electronics Systems, The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, United States of America)
,
Zubair Ahmad
(Department of Electrical Engineering and Computer Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States of America)
,
Liu Zhihong
(School of Microelectronics, Xidian University, Xi’an, People’s Republic of China)
,
Xiao Ming
(Center for Power Electronics Systems, The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, United States of America)
,
Perozek Joshua
(Department of Electrical Engineering and Computer Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States of America)
,
Ma Yunwei
(Center for Power Electronics Systems, The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, United States of America)
,
Palacios Tomas
(Department of Electrical Engineering and Computer Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States of America)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
36
号:
5
ページ:
054001 (24pp)
発行年:
2021年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)