文献
J-GLOBAL ID:202102222660512023
整理番号:21A0233601
n型およびp型Siの両方に対する有望な表面不動態化アプローチとしての硫化【JST・京大機械翻訳】
Sulfurization as a promising surface passivation approach for both n- and p-type Si
著者 (9件):
Das Ujjwal
(Institute of Energy Conversion, University of Delware,Newark,USA)
,
Theisen Robert
(Institute of Energy Conversion, University of Delware,Newark,USA)
,
Hanket Greg
(Institute of Energy Conversion, University of Delware,Newark,USA)
,
Upadhyaya Ajay
(School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,USA)
,
Rohatgi Ajeet
(School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,USA)
,
Hua Amandee
(University of Nevada Las Vegas (UNLV),Department of Chemistry & Biochemistry,Las Vegas,USA)
,
Weinhardt Lothar
(University of Nevada Las Vegas (UNLV),Department of Chemistry & Biochemistry,Las Vegas,USA)
,
Hauschild Dirk
(University of Nevada Las Vegas (UNLV),Department of Chemistry & Biochemistry,Las Vegas,USA)
,
Heske Clemens
(University of Nevada Las Vegas (UNLV),Department of Chemistry & Biochemistry,Las Vegas,USA)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
PVSC
ページ:
1167-1170
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)