文献
J-GLOBAL ID:202102223014539333
整理番号:21A0013200
高S/Dドーピングと不要チャネルを有する高選択性等方性ドライエッチングによる4スタックGe_0.915Sn_0.085ワイドナノシートの最初の実証【JST・京大機械翻訳】
First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels
著者 (8件):
Huang Yu-Shiang
(Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan)
,
Lu Fang-Liang
(Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan)
,
Tu Chien-Te
(Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan)
,
Chen Jyun-Yan
(Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan)
,
Tsai Chung-En
(Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan)
,
Ye Hung-Yu
(Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan)
,
Liu Yi-Chun
(Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan)
,
Liu C.
(Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
VLSI Technology
ページ:
1-2
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)