文献
J-GLOBAL ID:202102225674395917
整理番号:21A0233392
InGaP/GaAs二重ヘテロ接合裏面接触太陽電池のためのバイアホールエッチング【JST・京大機械翻訳】
Via-hole etching for InGaP/GaAs double heterojunction backside contact solar cells
著者 (7件):
Yoo Ji-Seon
(School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology,Gwangju,Republic of Korea)
,
Kim Ye-Chan
(School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology,Gwangju,Republic of Korea)
,
Kim Sung-Tae
(School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology,Gwangju,Republic of Korea)
,
Kang Ho-Kwan
(Korea Advanced Nano fab Center,Suwon-Si,Republic of Korea)
,
Jung Sang-Hyun
(Korea Advanced Nano fab Center,Suwon-Si,Republic of Korea)
,
Jeong Ho-Jung
(Lighting Materials and Components Research Center, Korea Photonics Technology Institute,Gwangju,Republic of Korea)
,
Jang Jae-Hyung
(School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology,Gwangju,Republic of Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
PVSC
ページ:
0284-0287
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)