文献
J-GLOBAL ID:202102227492335360
整理番号:21A0986021
高出力窒化ガリウムベーステラヘルツGunnダイオードの作製と特性評価【JST・京大機械翻訳】
Fabrication and characterization of high power Gallium Nitride based terahertz Gunn diodes
著者 (5件):
Hajo Ahid S.
(Technical University of Darmstadt, Institute for Microwave Engineering and Photonics (IMP),Department of Electrical Engineering and Information Technology,Germany)
,
Yilmazoglu Oktay
(Technical University of Darmstadt, Institute for Microwave Engineering and Photonics (IMP),Department of Electrical Engineering and Information Technology,Germany)
,
Dadgar Armin
(Otto von Guericke University Magdeburg, Institute of Physics, Faculty of Natural Sciences,Germany)
,
Kuppers Franko
(Technical University of Darmstadt, Institute for Microwave Engineering and Photonics (IMP),Department of Electrical Engineering and Information Technology,Germany)
,
Kusserow Thomas
(Technical University of Darmstadt, Institute for Microwave Engineering and Photonics (IMP),Department of Electrical Engineering and Information Technology,Germany)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
IRMMW-THz
ページ:
1-2
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)