文献
J-GLOBAL ID:202102229450567884
整理番号:21A0151595
シリコン無接合ナノワイヤトランジスタにおける電流振動領域の低温電場依存移動度【JST・京大機械翻訳】
Low temperature electric field dependent mobility of the current oscillation regime in silicon junctionless nanowire transistor
著者 (5件):
Yang Chong
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing,China,100049)
,
Han Wei-Hua
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing,China,100049)
,
Chen Jun-Dong
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing,China,100049)
,
Zhang Xiao-Di
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing,China,100049)
,
Guo Yang-Yan
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing,China,100049)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
ICSICT
ページ:
1-3
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)