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J-GLOBAL ID：202102229611015441
整理番号：21A0159347
InGaAs/InP光検出器の欠陥と暗電流の直接相関【JST・京大機械翻訳】
Direct correlation of defects and dark currents of InGaAs/InP photodetectors
Wang Hongzhen
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Wang Hongzhen
(Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Wang Hongzhen
(University of Chinese Academy of Sciences, Beijing, 100049, PR China)
,
Gu Yi
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Gu Yi
(Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Gu Yi
(Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, PR China)
,
Gu Yi
(University of Chinese Academy of Sciences, Beijing, 100049, PR China)
,
Yu Chunlei
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Yu Chunlei
(Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Zhu Shalu
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Zhu Shalu
(Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Zhu Yicheng
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Zhu Yicheng
(University of Chinese Academy of Sciences, Beijing, 100049, PR China)
,
Chen Pingping
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Cao Jiasheng
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Cao Jiasheng
(Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Cao Jiasheng
(University of Chinese Academy of Sciences, Beijing, 100049, PR China)
,
Yang Bo
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Yang Bo
(Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Li Tao
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Li Tao
(Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Shao Xiumei
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Shao Xiumei
(Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Li Xue
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Li Xue
(Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Gong Haimei
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Gong Haimei
(Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China)
,
Gong Haimei
(University of Chinese Academy of Sciences, Beijing, 100049, PR China)
資料名：
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻： 123 ページ： Null 発行年： 2021年
JST資料番号： W1055A ISSN： 1369-8001 資料種別： 逐次刊行物 (A)
記事区分： 原著論文 発行国： イギリス (GBR) 言語： 英語 (EN)
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