文献
J-GLOBAL ID:202102230561460777
整理番号:21A0013199
メモリ動作中の自発分極とトラップ電荷の直接抽出に基づくHfO_2FeFETにおけるV_th窓と信頼性の再検討【JST・京大機械翻訳】
Re-examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation
著者 (13件):
Ichihara Reika
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Suzuki Kunifumi
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Kusai Haruka
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Ariyoshi Keiko
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Akari Keisuke
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Takano Keisuke
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Matsuo Kazuhiro
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Kamiya Yuta
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Takahashi Kota
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Miyazawa Hidenori
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Kamimuta Yuuichi
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Sakuma Kiwamu
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
,
Saitoh Masumi
(Institute of Memory Technology R&D, Kioxia Corporation,Kawasaki,Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
VLSI Technology
ページ:
1-2
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)