文献
J-GLOBAL ID:202102231233504189
整理番号:21A0984732
DiracソースElectron注入を用いた記録-高サブ60mV/デカデ電流密度を有する単層MoS_2急傾斜トランジスタ【JST・京大機械翻訳】
Monolayer MoS2 Steep-slope Transistors with Record-high Sub-60-mV/decade Current Density Using Dirac-source Electron Injection
著者 (9件):
Liu Maomao
(The State University of New York,University at Buffalo,Department of Electrical Engineering,Buffalo,NY,USA)
,
Jaiswal Hemendra Nath
(The State University of New York,University at Buffalo,Department of Electrical Engineering,Buffalo,NY,USA)
,
Shahi Simran
(The State University of New York,University at Buffalo,Department of Electrical Engineering,Buffalo,NY,USA)
,
Wei Sichen
(The State University of New York,University at Buffalo,Department of Materials Design and Innovation,Buffalo,NY,USA)
,
Fu Yu
(The State University of New York,University at Buffalo,Department of Materials Design and Innovation,Buffalo,NY,USA)
,
Chang Chaoran
(The State University of New York,University at Buffalo,Department of Materials Design and Innovation,Buffalo,NY,USA)
,
Chakravarty Anindita
(The State University of New York,University at Buffalo,Department of Electrical Engineering,Buffalo,NY,USA)
,
Yao Fei
(The State University of New York,University at Buffalo,Department of Materials Design and Innovation,Buffalo,NY,USA)
,
Li Huamin
(The State University of New York,University at Buffalo,Department of Electrical Engineering,Buffalo,NY,USA)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
IEDM
ページ:
12.5.1-12.5.4
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)