文献
J-GLOBAL ID:202102237742039188
整理番号:21A0089110
両極性薄膜トランジスタ応用のための反応性スパッタリングによるSnO膜の調製とキャラクタリゼーション【JST・京大機械翻訳】
Preparation and characterization of SnO films via reactive sputtering for ambipolar thin-film transistor applications
著者 (5件):
Huo Jingyong
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
,
Wang Xiaolin
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
,
Wu Xiaohan
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
,
Liu Wen-Jun
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
,
Ding Shi-Jin
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
36
号:
2
ページ:
025004 (10pp)
発行年:
2020年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)