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J-GLOBAL ID：202102239612201987
整理番号：21A2225832
AlGaN/GaN HEMTのデバイス性能に対する裏面ドライエッチングの効果【JST・京大機械翻訳】
Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs
Ji Keyu
(Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi, 530004, People’s Republic of China)
,
Ji Keyu
(CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, People’s Republic of China)
,
Cui Xiao
(CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, People’s Republic of China)
,
Cui Xiao
(School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, People’s Republic of China)
,
Chen Jiwei
(Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi, 530004, People’s Republic of China)
,
Chen Jiwei
(CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, People’s Republic of China)
,
Guo Qi
(Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi, 530004, People’s Republic of China)
,
Guo Qi
(CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, People’s Republic of China)
,
Jiang Bing
(Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi, 530004, People’s Republic of China)
,
Jiang Bing
(CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, People’s Republic of China)
,
Wang Bingjun
(Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi, 530004, People’s Republic of China)
,
Wang Bingjun
(CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, People’s Republic of China)
,
Sun Wenhong
(Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi, 530004, People’s Republic of China)
,
Hu Weiguo
(Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi, 530004, People’s Republic of China)
,
Hu Weiguo
(CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, People’s Republic of China)
,
Hu Weiguo
(School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, People’s Republic of China)
,
Hua Qilin
(CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, People’s Republic of China)
,
Hua Qilin
(School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, People’s Republic of China)
資料名：
Nanotechnology
(Nanotechnology)
巻： 32 号： 35 ページ： 355203 (5pp) 発行年： 2021年
JST資料番号： W0108A ISSN： 0957-4484 CODEN： NNOTER 資料種別： 逐次刊行物 (A)
記事区分： 原著論文 発行国： イギリス (GBR) 言語： 英語 (EN)
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