文献
J-GLOBAL ID:202102242084491938
整理番号:21A3314630
単層MoSi_2N_4の電子および光学特性の歪変調【JST・京大機械翻訳】
Strain modulation of electronic and optical properties of monolayer MoSi2N4
著者 (7件):
Lv Xiurui
(School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China)
,
Xu Yan
(School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China)
,
Mao Bangyao
(School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China)
,
Liu Guipeng
(School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China)
,
Liu Guipeng
(Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China)
,
Zhao Guijuan
(School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China)
,
Yang Jianhong
(School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China)
資料名:
Physica E: Low-Dimensional Systems and Nanostructures
(Physica E: Low-Dimensional Systems and Nanostructures)
巻:
135
ページ:
Null
発行年:
2022年
JST資料番号:
W1066A
ISSN:
1386-9477
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)