文献
J-GLOBAL ID:202102242566490393
整理番号:21A0992531
異なるアニーリング温度でのDPN処理下の28nmノード高Kゲート誘電体のQ因子性能【JST・京大機械翻訳】
Q-Factor Performance of 28 nm-Node High-K Gate Dielectric under DPN Treatment at Different Annealing Temperatures
著者 (7件):
Chen Chii-Wen
(Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan)
,
Wang Shea-Jue
(Department of Materials and Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan)
,
Hsieh Wen-Ching
(Department of Electro-Optical Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan)
,
Chen Jian-Ming
(Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan)
,
Jong Te
(Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan)
,
Lan Wen-How
(Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan)
,
Wang Mu-Chun
(Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan)
資料名:
Electronics (Web)
(Electronics (Web))
巻:
9
号:
12
ページ:
2086
発行年:
2020年
JST資料番号:
U7178A
ISSN:
2079-9292
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)