文献
J-GLOBAL ID:202102242997121047
整理番号:21A0984281
二重SOIによる光電子その場センシングデバイス(PISD)におけるクロストークの抑制【JST・京大機械翻訳】
Suppressing crosstalk in the photoelectron in-situ sensing device (PISD) by double SOI
著者 (8件):
Arsalan M.
(State key lab of ASIC and System, School of Information Science and Engineering Fudan University,Shanghai,China)
,
Jian Liu
(State key lab of ASIC and System, School of Information Science and Engineering Fudan University,Shanghai,China)
,
Zaslavsky A.
(Brown University Providence,Department of Physics School of Engineering,RI,USA,02912)
,
Cristoloveanu S.
(IMEP-LAHC, INP-Grenoble/Minatec,Grenoble,France,38016)
,
Zhang X.
(Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029)
,
Liu FY.
(Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029)
,
Li B.
(Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029)
,
Wan J.
(State key lab of ASIC and System, School of Information Science and Engineering Fudan University,Shanghai,China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
EUROSOI-ULIS
ページ:
1-4
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)