文献
J-GLOBAL ID:202102244607103195
整理番号:21A0151779
埋め込み単極ダイオードを持つ新しいSiC MOSFET【JST・京大機械翻訳】
A Novel SiC MOSFET with Embedded Unipolar Diode
著者 (7件):
Xu Xiaojie
(School of Electronic Science and Engineering, University of Electronic Science and Technology of China,Chengdu,China,610054)
,
Deng Xiaochuan
(School of Electronic Science and Engineering, University of Electronic Science and Technology of China,Chengdu,China,610054)
,
Xing Yunpeng
(School of Electronic Science and Engineering, University of Electronic Science and Technology of China,Chengdu,China,610054)
,
Wen Yi
(School of Electronic Science and Engineering, University of Electronic Science and Technology of China,Chengdu,China,610054)
,
Li Zhiqiang
(Microsystem and Terahertz Research Center, China Academy of Engineering Physics,Mianyang,China,621900)
,
Li Xu
(School of Electronic Science and Engineering, University of Electronic Science and Technology of China,Chengdu,China,610054)
,
Zhang Bo
(School of Electronic Science and Engineering, University of Electronic Science and Technology of China,Chengdu,China,610054)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
ICSICT
ページ:
1-3
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)