文献
J-GLOBAL ID:202102246815271420
整理番号:21A0013175
性能ブースタとしてのエキシマレーザアニールと歪シリコンによるドーパント活性化を用いた3D逐次低温トップ層デバイス【JST・京大機械翻訳】
3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters
著者 (30件):
Vandooren A.
(IMEC,Leuven,Belgium,3001)
,
Wu Z.
(IMEC,Leuven,Belgium,3001)
,
Parihar N.
(IMEC,Leuven,Belgium,3001)
,
Franco J.
(IMEC,Leuven,Belgium,3001)
,
Parvais B.
(VUB,Brussels,Belgium)
,
Matagne P.
(IMEC,Leuven,Belgium,3001)
,
Debruyn H.
(IMEC,Leuven,Belgium,3001)
,
Mannaert G.
(IMEC,Leuven,Belgium,3001)
,
Devriendt K.
(IMEC,Leuven,Belgium,3001)
,
Teugels L.
(IMEC,Leuven,Belgium,3001)
,
Vecchio E.
(IMEC,Leuven,Belgium,3001)
,
Radisic D.
(IMEC,Leuven,Belgium,3001)
,
Rosseel E.
(IMEC,Leuven,Belgium,3001)
,
Hikavyy A.
(IMEC,Leuven,Belgium,3001)
,
Chan B. T.
(IMEC,Leuven,Belgium,3001)
,
Waldron N.
(IMEC,Leuven,Belgium,3001)
,
Mitard J.
(IMEC,Leuven,Belgium,3001)
,
Besnard G.
(SOITEC, Parc Technologique des Fontaines,Bernin,France,38190)
,
Alvarez A.
(SOITEC, Parc Technologique des Fontaines,Bernin,France,38190)
,
Gaudin G.
(SOITEC, Parc Technologique des Fontaines,Bernin,France,38190)
,
Schwarzenbach W.
(SOITEC, Parc Technologique des Fontaines,Bernin,France,38190)
,
Radu I.
(SOITEC, Parc Technologique des Fontaines,Bernin,France,38190)
,
Nguyen B.-Y.
(SOITEC, Parc Technologique des Fontaines,Bernin,France,38190)
,
Huet K.
(IMEC,Leuven,Belgium,3001)
,
Tabata T.
(Screen-Lasse, Laser Systems & Solutions of Europe (LASSE),Gennevilliers,France,92230)
,
Mazzamuto F.
(Screen-Lasse, Laser Systems & Solutions of Europe (LASSE),Gennevilliers,France,92230)
,
Demuynck S.
(IMEC,Leuven,Belgium,3001)
,
Boemmels J.
(IMEC,Leuven,Belgium,3001)
,
Collaert N.
(IMEC,Leuven,Belgium,3001)
,
Horiguchi N.
(IMEC,Leuven,Belgium,3001)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
VLSI Technology
ページ:
1-2
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)