文献
J-GLOBAL ID:202102250040854682
整理番号:21A0182061
点欠陥エンジニアリングとSbドーピングによるMg_2Sn単結晶の熱電性能の増強【JST・京大機械翻訳】
Enhancing the Thermoelectric Performance of Mg2Sn Single Crystals via Point Defect Engineering and Sb Doping
著者 (6件):
Saito Wataru
(Department of Applied Physics, Graduate School of Engineering, Tohoku University, Japan)
,
Hayashi Kei
(Department of Applied Physics, Graduate School of Engineering, Tohoku University, Japan)
,
Huang Zhicheng
(Department of Applied Physics, Graduate School of Engineering, Tohoku University, Japan)
,
Dong Jinfeng
(State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, China)
,
Li Jing-Feng
(State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, China)
,
Miyazaki Yuzuru
(Department of Applied Physics, Graduate School of Engineering, Tohoku University, Japan)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
12
号:
52
ページ:
57888-57897
発行年:
2020年
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)