文献
J-GLOBAL ID:202102250160900743
整理番号:21A0233749
高いキャリア濃度を持つマイクロ秒寿命のための多結晶CdSeTeデバイスのヒ素ドーピング【JST・京大機械翻訳】
Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations
著者 (14件):
Munshi Amit H.
(Colorado State University,Dept. of Mech. Engineering.,Fort Collins,USA)
,
Reich Carey L.
(Colorado State University,Dept. of Mech. Engineering.,Fort Collins,USA)
,
Danielson Adam H.
(Colorado State University,Dept. of Mech. Engineering.,Fort Collins,USA)
,
Pandey Ramesh
(Colorado State University,Dept. of Mech. Engineering.,Fort Collins,USA)
,
Kuciauskas Darius
(MCST NREL,Golden,USA)
,
Guo Jinglong
(University of Illinois,Department of Physics,Chicago,USA)
,
Li Siming
(MCST NREL,Golden,USA)
,
Shah Akash
(Colorado State University,Dept. of Mech. Engineering.,Fort Collins,USA)
,
Swain Santosh
(Institute of Materials Research, Washington State University,Pullman,USA)
,
Shimpi Tushar M.
(Colorado State University,Dept. of Mech. Engineering.,Fort Collins,USA)
,
Al-Hamdi Tawfeeq K.
(Institute of Materials Research, Washington State University,Pullman,USA)
,
Lynn Kelvin G.
(Institute of Materials Research, Washington State University,Pullman,USA)
,
Klie Robert F.
(University of Illinois,Department of Physics,Chicago,USA)
,
Sampath Walajabad S.
(Colorado State University,Dept. of Mech. Engineering.,Fort Collins,USA)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
PVSC
ページ:
1824-1828
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)