文献
J-GLOBAL ID:202102257758294431
整理番号:21A0577152
無接合FinFETにおけるランダム電信雑音を引き起こす単一荷電欠陥の物理的モデリングへの寄与【JST・京大機械翻訳】
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
著者 (6件):
Atamuratov Atabek E.
(Department of Physics, Urgench State University, Kh.Olimjan str.,14, 220100 Urgench, Uzbekistan)
,
Khalilloev Mahkam M.
(Department of Physics, Urgench State University, Kh.Olimjan str.,14, 220100 Urgench, Uzbekistan)
,
Yusupov Ahmed
(Department of Electronics, Tashkent University of Information Technologies, A.Temur str.,108, 100200 Tashkent, Uzbekistan)
,
Garcia-Loureiro A. J.
(Department of Computational electronics, University of Santiago de Compostela, Praza do Obradoiro, 15782 Santiago de Compostela, Spain)
,
Chedjou Jean Chamberlain
(Department of Transportation informatics, University of Klagenfurt, 9020 Klagenfurt, Austria)
,
Kyandoghere Kyamakya
(Department of Transportation informatics, University of Klagenfurt, 9020 Klagenfurt, Austria)
資料名:
Applied Sciences (Web)
(Applied Sciences (Web))
巻:
10
号:
15
ページ:
5327
発行年:
2020年
JST資料番号:
U7135A
ISSN:
2076-3417
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)