文献
J-GLOBAL ID:202102258394691753
整理番号:21A0166525
RFマグネトロン蒸着n-SiIn_2O_3:Er膜のナノワイヤ構造,光学特性および伝導バンドオフセット【JST・京大機械翻訳】
Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si¥In2O3:Er films.
著者 (21件):
Feklistov K V
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
,
Feklistov K V
(Academ Infrared LLC, 630090, Novosibirsk, Russia)
,
Lemzyakov A G
(Budker Institute of Nuclear Physics SB RAS, 630090, Novosibirsk, Russia)
,
Prosvirin I P
(Boreskov Institute of Catalysis SB RAS, 630090, Novosibirsk, Russia)
,
Gismatulin A A
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
,
Gismatulin A A
(Novosibirsk State University, 630090, Novosibirsk, Russia)
,
Shklyaev A A
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
,
Shklyaev A A
(Novosibirsk State University, 630090, Novosibirsk, Russia)
,
Zhivodkov Y A
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
,
Krivyakin G К
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
,
Krivyakin G К
(Novosibirsk State University, 630090, Novosibirsk, Russia)
,
Komonov A I
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
,
Kozhukhov А S
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
,
Kozhukhov А S
(Novosibirsk State University, 630090, Novosibirsk, Russia)
,
Spesivsev E V
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
,
Gulyaev D V
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
,
Abramkin D S
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
,
Abramkin D S
(Novosibirsk State University, 630090, Novosibirsk, Russia)
,
Pugachev A M
(Institute of Automation and Electrometry SB RAS, 630090, Novosibirsk, Russia)
,
Esaev D G
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
,
Sidorov G Yu
(Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia)
資料名:
Materials Research Express
(Materials Research Express)
巻:
7
号:
12
ページ:
125903 (11pp)
発行年:
2020年
JST資料番号:
W5570A
ISSN:
2053-1591
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)