文献
J-GLOBAL ID:202102261175971888
整理番号:21A0668095
HfO_2とSiN_xゲート誘電体を持つAlGaN/GaN MIS-HEMTにおける界面特性の解析【JST・京大機械翻訳】
Analysis of Interface Properties in AlGaN/GaN MIS-HEMTs with HfO2 and SiNx Gate Dielectric
著者 (6件):
Huang Zhi
(Nanjing University of Posts and Telecommunications,College of Electronic and Optical Engineering & College of Microelectronics,Nanjing,China)
,
Liu Jianhua
(Nanjing University of Posts and Telecommunications,College of Electronic and Optical Engineering & College of Microelectronics,Nanjing,China)
,
Huang Xiaoming
(Nanjing University of Posts and Telecommunications,College of Electronic and Optical Engineering & College of Microelectronics,Nanjing,China)
,
Yao Jiafei
(Nanjing University of Posts and Telecommunications,College of Electronic and Optical Engineering & College of Microelectronics,Nanjing,China)
,
Zhang Jun
(Nanjing University of Posts and Telecommunications,College of Electronic and Optical Engineering & College of Microelectronics,Nanjing,China)
,
Guo Yufeng
(Nanjing University of Posts and Telecommunications,College of Electronic and Optical Engineering & College of Microelectronics,Nanjing,China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
ICPES
ページ:
549-552
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)