文献
J-GLOBAL ID:202102261840430096
整理番号:21A0796685
数層MoS_2における局在共鳴状態間のゲート調整可能な量子ドット形成【JST・京大機械翻訳】
Gate-tunable quantum dot formation between localized-resonant states in a few-layer MoS2
著者 (11件):
Kim Bum-Kyu
(Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea)
,
Choi Dong-Hwan
(Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea)
,
Choi Dong-Hwan
(Department of Physics, Jeonbuk National University, Jeonju 54896, Republic of Korea)
,
Yu Byung-Sung
(Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea)
,
Yu Byung-Sung
(Department of Physics, Jeonbuk National University, Jeonju 54896, Republic of Korea)
,
Kim Minsoo
(Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom)
,
Watanabe Kenji
(Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan)
,
Taniguchi Takashi
(International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan)
,
Kim Ju-Jin
(Department of Physics, Jeonbuk National University, Jeonju 54896, Republic of Korea)
,
Bae Myung-Ho
(Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea)
,
Bae Myung-Ho
(Department of Nano Science, University of Science and Technology, Daejeon, 34113, Republic of Korea)
資料名:
Nanotechnology
(Nanotechnology)
巻:
32
号:
19
ページ:
195207 (8pp)
発行年:
2021年
JST資料番号:
W0108A
ISSN:
0957-4484
CODEN:
NNOTER
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)