文献
J-GLOBAL ID:202102263381420983
整理番号:21A2041507
高アイソレーション複合バッファ層設計によるSi RF HEMT上の6インチGaNの特性【JST・京大機械翻訳】
The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design
著者 (7件):
Huang Chong-Rong
(Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan)
,
Liu Chia-Hao
(Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan)
,
Wang Hsiang-Chun
(Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan)
,
Kao Hsuan-Ling
(Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan)
,
Chiu Hsien-Chin
(Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan)
,
Chen Chih-Tien
(National Chung-Shan Institute of Science and Technology, Materials and Electro-Optics Research Division, Taoyuan 333, Taiwan)
,
Chang Kuo-Jen
(National Chung-Shan Institute of Science and Technology, Materials and Electro-Optics Research Division, Taoyuan 333, Taiwan)
資料名:
Electronics (Web)
(Electronics (Web))
巻:
10
号:
1
ページ:
46
発行年:
2020年
JST資料番号:
U7178A
ISSN:
2079-9292
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)