文献
J-GLOBAL ID:202102265938074088
整理番号:21A2171968
グラフェンナノリボントランジスタの集積を可能にする高度に整列した高分子ナノワイヤエッチマスクリソグラフィー【JST・京大機械翻訳】
Highly Aligned Polymeric Nanowire Etch-Mask Lithography Enabling the Integration of Graphene Nanoribbon Transistors
著者 (6件):
Jeon Sangheon
(Department of Cogno-Mechatronics Engineering, Department of Optics and Mechatronics Engineering, College of Nanoscience and Nanotechnology, Pusan National University, Busan 46241, Korea)
,
Han Pyunghwa
(Research Center for S-T/F, Samsung Electro-Mechanics, Busan 46754, Korea)
,
Jeong Jeonghwa
(Department of Cogno-Mechatronics Engineering, Department of Optics and Mechatronics Engineering, College of Nanoscience and Nanotechnology, Pusan National University, Busan 46241, Korea)
,
Hwang Wan Sik
(Department of Materials Engineering, Korea Aerospace University, Goyang 10540, Korea)
,
Hwang Wan Sik
(Smart Drone Convergence, Korea Aerospace University, Goyang 10540, Korea)
,
Hong Suck Won
(Department of Cogno-Mechatronics Engineering, Department of Optics and Mechatronics Engineering, College of Nanoscience and Nanotechnology, Pusan National University, Busan 46241, Korea)
資料名:
Nanomaterials (Web)
(Nanomaterials (Web))
巻:
11
号:
1
ページ:
33
発行年:
2020年
JST資料番号:
U7252A
ISSN:
2079-4991
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)