文献
J-GLOBAL ID:202102272341241607
整理番号:21A0428932
MoS_2の電子構造と水素発生反応に及ぼす硫黄空孔濃度効果の第一原理研究【JST・京大機械翻訳】
First-principles study of sulfur vacancy concentration effect on the electronic structures and hydrogen evolution reaction of MoS2
著者 (4件):
Zhou Wenyu
(School of Chemistry and Chemical Engineering, Chongqing Key Laboratory of Theoretical and Computational Chemistry, Chongqing University, Chongqing 401331, People’s Republic of China)
,
Dong Lichun
(School of Chemistry and Chemical Engineering, Chongqing Key Laboratory of Theoretical and Computational Chemistry, Chongqing University, Chongqing 401331, People’s Republic of China)
,
Tan Luxi
(School of Chemistry and Chemical Engineering, Chongqing Key Laboratory of Theoretical and Computational Chemistry, Chongqing University, Chongqing 401331, People’s Republic of China)
,
Tang Qing
(School of Chemistry and Chemical Engineering, Chongqing Key Laboratory of Theoretical and Computational Chemistry, Chongqing University, Chongqing 401331, People’s Republic of China)
資料名:
Nanotechnology
(Nanotechnology)
巻:
32
号:
14
ページ:
145718 (7pp)
発行年:
2021年
JST資料番号:
W0108A
ISSN:
0957-4484
CODEN:
NNOTER
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)