文献
J-GLOBAL ID:202102274950091722
整理番号:21A0150003
負性容量電界効果トランジスタにおける低ドレイン電流範囲内の急峻なサブ閾値スイングの起源【JST・京大機械翻訳】
Origin of Steep Subthreshold Swing Within the Low Drain Current Range in Negative Capacitance Field Effect Transistor
著者 (6件):
Su Chang
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University,Beijing,CHINA,100871)
,
Huang Qianqian
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University,Beijing,CHINA,100871)
,
Yang Mengxuan
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University,Beijing,CHINA,100871)
,
Chen Liang
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University,Beijing,CHINA,100871)
,
Liang Zhongxin
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University,Beijing,CHINA,100871)
,
Huang Ru
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University,Beijing,CHINA,100871)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
CSTIC
ページ:
1-3
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)