文献
J-GLOBAL ID:202102275392213709
整理番号:21A0150004
単層二硫化モリブデンに基づくゲート調節可能メモリトランジスタ【JST・京大機械翻訳】
Gate Tunable Memtransistor based on Monolayer Molybdenum Disulfide
著者 (8件):
Yan Meng
(Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical & Electronic Engineering, Tianjin University of Technology,Tianjin,China,300384)
,
Wang Fang
(Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical & Electronic Engineering, Tianjin University of Technology,Tianjin,China,300384)
,
Shen Jiaqiang
(Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical & Electronic Engineering, Tianjin University of Technology,Tianjin,China,300384)
,
Di Xichao
(Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical & Electronic Engineering, Tianjin University of Technology,Tianjin,China,300384)
,
Lin Xin
(Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical & Electronic Engineering, Tianjin University of Technology,Tianjin,China,300384)
,
Di Huanhuan
(Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical & Electronic Engineering, Tianjin University of Technology,Tianjin,China,300384)
,
Mi Wei
(Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical & Electronic Engineering, Tianjin University of Technology,Tianjin,China,300384)
,
Zhang Kailiang
(Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electrical & Electronic Engineering, Tianjin University of Technology,Tianjin,China,300384)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
CSTIC
ページ:
1-3
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)