文献
J-GLOBAL ID:202102278628993499
整理番号:21A0445889
埋め込み水平Schottkyデバイスを有するHV nLDMOSの強化されたESD信頼性【JST・京大機械翻訳】
Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices
著者 (6件):
Hong Shi-Zhe
(National United University,Department of Electronic Engineering,Miaoli,Taiwan)
,
Chen Shen-Li
(National United University,Department of Electronic Engineering,Miaoli,Taiwan)
,
Fan Sheng-Kai
(National United University,Department of Electronic Engineering,Miaoli,Taiwan)
,
Lin Po-Lin
(National United University,Department of Electronic Engineering,Miaoli,Taiwan)
,
Lan Tien-Yu
(National United University,Department of Electronic Engineering,Miaoli,Taiwan)
,
Zhou Yu-Jie
(National United University,Department of Electronic Engineering,Miaoli,Taiwan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
ICKII
ページ:
78-79
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)