文献
J-GLOBAL ID:202102281127811397
整理番号:21A0159342
MOCVDおよび太陽光ブラインド紫外光検出器によりc-サファイア上に成長させたε-Ga_2O_3膜の結晶特性【JST・京大機械翻訳】
Crystalline properties of ε-Ga2O3 film grown on c-sapphire by MOCVD and solar-blind ultraviolet photodetector
著者 (11件):
Cao Xu
(Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, China)
,
Cao Xu
(Nano Fabrication Facility, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou, 215123, China)
,
Xing Yanhui
(Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, China)
,
Han Jun
(Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, China)
,
Li Junshuai
(Nano Fabrication Facility, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou, 215123, China)
,
He Tao
(Nano Fabrication Facility, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou, 215123, China)
,
He Tao
(School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China)
,
Zhang Xiaodong
(Nano Fabrication Facility, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou, 215123, China)
,
Zhao Jiahao
(Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, China)
,
Zhao Jiahao
(Nano Fabrication Facility, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou, 215123, China)
,
Zhang Baoshun
(Nano Fabrication Facility, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou, 215123, China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
123
ページ:
Null
発行年:
2021年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)