文献
J-GLOBAL ID:202102282171987856
整理番号:21A0234693
前方伝導能力を改善した新しい4H-SiC PiNダイオード【JST・京大機械翻訳】
A novel 4H-SiC PiN diode with improved forward conduction ability
著者 (4件):
Luo Jiaming
(University of Electronic Science and Technology of China,The State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering,Chengdu,P. R. China)
,
Zhang Yourun
(University of Electronic Science and Technology of China,The State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering,Chengdu,P. R. China)
,
Chen Hang
(University of Electronic Science and Technology of China,The State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering,Chengdu,P. R. China)
,
Luo Maojiu
(University of Electronic Science and Technology of China,The State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering,Chengdu,P. R. China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
SSLChina: IFWS
ページ:
45-48
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)