文献
J-GLOBAL ID:202102284856962511
整理番号:21A0445885
熱応力を有する28nm高k nMOSFETの接合完全性【JST・京大機械翻訳】
Junction Integrity for 28nm High-k nMOSFETs with Thermal Stress
著者 (7件):
Lin Yu-Chen
(Minghsin University of Science and Technology,Department Electronic Engineering,Hsinchu,Taiwan,30401)
,
Zhan Kai-Chun
(Minghsin University of Science and Technology,Department Electronic Engineering,Hsinchu,Taiwan,30401)
,
Zhang Ji-Min
(Minghsin University of Science and Technology,Department Electronic Engineering,Hsinchu,Taiwan,30401)
,
Chen Jian-Ming
(Minghsin University of Science and Technology,Department Electronic Engineering,Hsinchu,Taiwan,30401)
,
Chang Cheng-Hsun-Tony
(Minghsin University of Science and Technology,Department Electronic Engineering,Hsinchu,Taiwan,30401)
,
Wang Shea-Jue
(National Taipei University of Technology,Department of Materials and Resources Engineering,Taipei,Taiwan,10608)
,
Wang Mu-Chun
(Minghsin University of Science and Technology,Department Electronic Engineering,Hsinchu,Taiwan,30401)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
ICKII
ページ:
64-66
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)